onsemi Isolated PowerTrench 2 N-Channel Dual N-Channel Power Trench MOSFET, 12 A, 40 V Enhancement, 8-Pin Power 33

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Subtotal 750 units (supplied on a reel)*

₩1,542,000.00

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1500 +₩2,016.001%

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포장 옵션
RS 제품 번호:
806-3504P
제조사 부품 번호:
FDMC8030
제조업체:
onsemi
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브랜드

onsemi

Product Type

Dual N-Channel Power Trench MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

40V

Series

PowerTrench

Package Type

Power 33

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

30nC

Maximum Gate Source Voltage Vgs

-12V, +12V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

1.9W

Minimum Operating Temperature

-55°C

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Standards/Approvals

Lead-Free and RoHS

Width

3mm

Height

750μm

Length

3mm

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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