제조사부품번호

onsemi Isolated PowerTrench 2 Type N-Channel Dual N-Channel Power Trench MOSFET, 12 A, 40 V Enhancement, 8-Pin Power 33

RS 제품 번호:: 806-3504
제조사 부품 번호:: FDMC8030
제조업체:: onsemi

onsemi Isolated PowerTrench 2 Type N-Channel Dual N-Channel Power Trench MOSFET, 12 A, 40 V Enhancement, 8-Pin Power 33

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩12,126.00

마지막 RS 재고

추가로 2025년 12월 29일 부터 370 개 단위 배송
2026년 1월 05일 부터 최종 2,150 개 단위 배송

수량	한팩당	한팩당*
5 - 745	₩2,425.20	₩12,126.00
750 - 1495	₩2,368.80	₩11,844.00
1500 +	₩2,327.44	₩11,637.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 806-3504
제조사 부품 번호:: FDMC8030
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	Dual N-Channel Power Trench MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	40V
	Series	PowerTrench
	Package Type	Power 33
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	10mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.9W
	Typical Gate Charge Qg @ Vgs	30nC
	Maximum Gate Source Voltage Vgs	±12 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Standards/Approvals	Lead-Free and RoHS
	Length	3mm
	Height	0.75mm
	Width	3 mm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type Dual N-Channel Power Trench MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 40V
	Series PowerTrench
	Package Type Power 33
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 10mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.9W
	Typical Gate Charge Qg @ Vgs 30nC
	Maximum Gate Source Voltage Vgs ±12 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Standards/Approvals Lead-Free and RoHS
	Length 3mm
	Height 0.75mm
	Width 3 mm
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type N-Channel Dual N-Channel Power Trench MOSFET, 12 A, 40 V Enhancement, 8-Pin Power 33

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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