IXYS Type N-Channel MOSFET, 50 A, 600 V Enhancement, 3-Pin TO-247 IXFH50N60P3
- RS 제품 번호:
- 802-4388
- 제조사 부품 번호:
- IXFH50N60P3
- 제조업체:
- IXYS
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩16,186.80
마지막 RS 재고
- 6 개 단위 배송 준비 완료
- 2026년 1월 01일 부터 최종 7 개 단위 배송
수량 | 한팩당 |
|---|---|
| 1 - 7 | ₩16,186.80 |
| 8 + | ₩15,904.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 802-4388
- 제조사 부품 번호:
- IXFH50N60P3
- 제조업체:
- IXYS
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 145mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 1.04kW | |
| Typical Gate Charge Qg @ Vgs | 94nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.26mm | |
| Height | 21.46mm | |
| Width | 5.3 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 145mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 1.04kW | ||
Typical Gate Charge Qg @ Vgs 94nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.26mm | ||
Height 21.46mm | ||
Width 5.3 mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
관련된 링크들
- IXYS Type N-Channel MOSFET, 26 A, 500 V Enhancement, 3-Pin TO-247 IXFH26N50P
- IXYS Type N-Channel MOSFET, 36 A, 500 V Enhancement, 3-Pin TO-247 IXFH36N50P
- IXYS Type N-Channel MOSFET, 44 A, 500 V Enhancement, 3-Pin TO-247 IXFH44N50P
- IXYS Type N-Channel MOSFET, 34 A, 500 V Enhancement, 3-Pin TO-247 IXFH34N50P3
- IXYS Type N-Channel MOSFET, 26 A, 500 V Enhancement, 3-Pin TO-247 IXFH26N50P3
- IXYS Type N-Channel MOSFET, 60 A, 500 V Enhancement, 3-Pin TO-247 IXFH60N50P3
- IXYS Type N-Channel MOSFET, 30 A, 500 V Enhancement, 3-Pin TO-247 IXFH30N50Q3
- IXYS Type N-Channel MOSFET, 50 A, 600 V Enhancement, 3-Pin TO-247