IXYS Type N-Channel MOSFET, 18 A, 1 kV Enhancement, 3-Pin ISOPLUS247 IXFR24N100Q3
- RS 제품 번호:
- 801-1433
- Distrelec 제품 번호:
- 302-53-394
- 제조사 부품 번호:
- IXFR24N100Q3
- 제조업체:
- IXYS
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Subtotal (1 unit)*
₩45,856.96
일시적 품절
- 2026년 7월 08일 부터 12 개 단위 배송
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- RS 제품 번호:
- 801-1433
- Distrelec 제품 번호:
- 302-53-394
- 제조사 부품 번호:
- IXFR24N100Q3
- 제조업체:
- IXYS
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | ISOPLUS247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 490mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Height | 21.34mm | |
| Width | 5.21 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253394 | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type ISOPLUS247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 490mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Height 21.34mm | ||
Width 5.21 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 30253394 | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
관련된 링크들
- IXYS Type N-Channel MOSFET, 10 A, 1 kV Enhancement, 3-Pin ISOPLUS247 IXFR15N100Q3
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- IXYS Type N-Channel MOSFET, 18 A, 1 kV Enhancement, 3-Pin ISOPLUS247
- IXYS Type N-Channel MOSFET, 45 A, 500 V Enhancement, 3-Pin ISOPLUS247 IXFR64N50Q3
- IXYS Type N-Channel MOSFET, 25 A, 800 V Enhancement, 3-Pin ISOPLUS247 IXFR44N80P
- IXYS Type N-Channel MOSFET, 45 A, 500 V Enhancement, 3-Pin ISOPLUS247
- IXYS Polar HiPerFET Type N-Channel MOSFET, 70 A, 300 V Enhancement, 3-Pin ISOPLUS247 IXFR140N30P
- IXYS Type N-Channel MOSFET, 25 A, 800 V Enhancement, 3-Pin ISOPLUS247
