제조사부품번호

IXYS Type N-Channel MOSFET, 18 A, 1 kV Enhancement, 3-Pin ISOPLUS247

RS 제품 번호:: 168-4708
제조사 부품 번호:: IXFR24N100Q3
제조업체:: IXYS

IXYS Type N-Channel MOSFET, 18 A, 1 kV Enhancement, 3-Pin ISOPLUS247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩1,348,411.20

일시적 품절

2026년 10월 09일 부터 배송

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수량	한팩당	Per Tube*
30 - 30	₩44,947.04	₩1,348,428.12
60 - 90	₩43,969.44	₩1,319,100.12
120 +	₩42,993.72	₩1,289,811.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 168-4708
제조사 부품 번호:: IXFR24N100Q3
제조업체:: IXYS

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	IXYS
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	1kV
	Package Type	ISOPLUS247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	490mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	140nC
	Maximum Power Dissipation Pd	500W
	Forward Voltage Vf	1.4V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	5.21 mm
	Length	16.13mm
	Height	21.34mm
	Automotive Standard	No

	모두 선택
	브랜드 IXYS
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 1kV
	Package Type ISOPLUS247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 490mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 140nC
	Maximum Power Dissipation Pd 500W
	Forward Voltage Vf 1.4V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 5.21 mm
	Length 16.13mm
	Height 21.34mm
	Automotive Standard No

COO (Country of Origin):: US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS

A wide range of Advanced discrete Power MOSFET devices from IXYS

IXYS Type N-Channel MOSFET, 18 A, 1 kV Enhancement, 3-Pin ISOPLUS247

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

MOSFET Transistors, IXYS

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