IXYS Type N-Channel MOSFET, 32 A, 1 kV Enhancement, 3-Pin TO-264 IXFK32N100Q3
- RS 제품 번호:
- 801-1409
- Distrelec 제품 번호:
- 302-53-348
- 제조사 부품 번호:
- IXFK32N100Q3
- 제조업체:
- IXYS
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₩56,024.00
일시적 품절
- 2026년 11월 02일 부터 배송
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- RS 제품 번호:
- 801-1409
- Distrelec 제품 번호:
- 302-53-348
- 제조사 부품 번호:
- IXFK32N100Q3
- 제조업체:
- IXYS
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 320mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Maximum Power Dissipation Pd | 1.25kW | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 19.96mm | |
| Height | 26.16mm | |
| Width | 5.13 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 320mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Maximum Power Dissipation Pd 1.25kW | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 19.96mm | ||
Height 26.16mm | ||
Width 5.13 mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
관련된 링크들
- IXYS Type N-Channel MOSFET, 32 A, 1 kV Enhancement, 3-Pin TO-264
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- IXYS Type N-Channel MOSFET, 27 A, 800 V Enhancement, 3-Pin TO-264 IXFK27N80Q
- IXYS Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-264 IXFK48N60Q3
- IXYS Type N-Channel MOSFET, 64 A, 500 V Enhancement, 3-Pin TO-264 IXFK64N50Q3
- IXYS Type N-Channel MOSFET, 27 A, 800 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET, 26 A, 1200 V Enhancement, 3-Pin TO-264 IXFK26N120P