IXYS Type N-Channel MOSFET, 32 A, 1 kV Enhancement, 3-Pin TO-264
- RS 제품 번호:
- 168-4702
- 제조사 부품 번호:
- IXFK32N100Q3
- 제조업체:
- IXYS
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대량 구매 할인 기용 가능
Subtotal (1 tube of 25 units)*
₩1,139,609.00
일시적 품절
- 2026년 10월 12일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 25 - 100 | ₩45,584.36 | ₩1,139,599.60 |
| 125 + | ₩41,025.36 | ₩1,025,652.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 168-4702
- 제조사 부품 번호:
- IXFK32N100Q3
- 제조업체:
- IXYS
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 320mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.25kW | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Height | 26.16mm | |
| Standards/Approvals | No | |
| Width | 5.13 mm | |
| Length | 19.96mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 320mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.25kW | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Height 26.16mm | ||
Standards/Approvals No | ||
Width 5.13 mm | ||
Length 19.96mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
관련된 링크들
- IXYS Type N-Channel MOSFET, 32 A, 1 kV Enhancement, 3-Pin TO-264 IXFK32N100Q3
- IXYS Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 3-Pin TO-264 IXFK24N100Q3
- IXYS Type N-Channel MOSFET, 27 A, 800 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET, 64 A, 500 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET, 27 A, 800 V Enhancement, 3-Pin TO-264 IXFK27N80Q
- IXYS Type N-Channel MOSFET, 64 A, 500 V Enhancement, 3-Pin TO-264 IXFK64N50Q3