IXYS Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 3-Pin TO-264 IXFK24N100Q3
- RS 제품 번호:
- 801-1405
- Distrelec 제품 번호:
- 302-53-345
- 제조사 부품 번호:
- IXFK24N100Q3
- 제조업체:
- IXYS
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Subtotal (1 unit)*
₩41,284.80
일시적 품절
- 2026년 2월 11일 부터 50 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 1 - 6 | ₩41,284.80 |
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| 13 + | ₩39,630.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 801-1405
- Distrelec 제품 번호:
- 302-53-345
- 제조사 부품 번호:
- IXFK24N100Q3
- 제조업체:
- IXYS
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 440mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 1kW | |
| Maximum Operating Temperature | 150°C | |
| Length | 19.96mm | |
| Height | 26.16mm | |
| Width | 5.13 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253345 | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 440mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 1kW | ||
Maximum Operating Temperature 150°C | ||
Length 19.96mm | ||
Height 26.16mm | ||
Width 5.13 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 30253345 | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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