IXYS Single HiperFET, Q3-Class 1 N-Channel MOSFET, 15 A, 1 kV Enhancement, 3-Pin TO-247 IXFH15N100Q3

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포장 옵션
RS 제품 번호:
801-1389P
제조사 부품 번호:
IXFH15N100Q3
제조업체:
IXYS
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브랜드

IXYS

Transistor Configuration

Single

Series

HiperFET, Q3-Class

Number of Elements per Chip

1

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

15 A

Maximum Drain Source Voltage (Vds)

1 kV

Channel Mode

Enhancement

Pin Count

3

Package Type

TO-247

Automotive Standard

No

Forward Voltage (Vf)

1.4 V

Height

16.26 mm

Length

16.26 mm

Maximum Drain Source Resistance (Rds)

1.05 Ω

Maximum Gate Source Voltage (Vgs)

-30 V, +30 V

Maximum Operating Temperature

150 °C

Maximum Power Dissipation (Pd)

690 W

Minimum Operating Temperature

-55 °C

Mount Type

Through Hole, Through Hole

Standards/Approvals

No

Typical Gate Charge (Qg) @ Vgs

64 nC

Width

5.3 mm

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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