onsemi Isolated 2 Type P, Type N-Channel Power MOSFET, 510 mA, 60 V Enhancement, 6-Pin SOT-23 NDC7001C

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포장 옵션
RS 제품 번호:
761-4574P
제조사 부품 번호:
NDC7001C
제조업체:
onsemi
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브랜드

onsemi

Channel Type

Type P, Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

510mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

960mW

Typical Gate Charge Qg @ Vgs

1.1nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-20V, +20V

Forward Voltage Vf

800mV

Maximum Operating Temperature

+150°C

Transistor Configuration

Isolated

Width

1.7mm

Height

1mm

Standards/Approvals

No

Length

3mm

Number of Elements per Chip

2

Automotive Standard

No

The NDC7001C is a dual N & P-Channel MOSFET that feature ON Semi’s DMOS technology. DMOS ensures fast switching, reliability and on-state resistance. These MOSFETs are a SOT-23 package type featuring 6 pins.

Features and benefits:


• DMOS Technology

• High saturation current

• High density cell design

• Copper lead frame for superior thermal and electrical capabilities

NDC7001C MOSFETs are ideal for;


• Low voltage

• Low current

• Switching

• Power supplies

Enhancement Mode Dual MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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