onsemi Isolated 2 Type P, Type N-Channel Power MOSFET, 510 mA, 60 V Enhancement, 6-Pin SOT-23 NDC7001C

RS 제품 번호:: 761-4574
제조사 부품 번호:: NDC7001C
제조업체:: onsemi

onsemi Isolated 2 Type P, Type N-Channel Power MOSFET, 510 mA, 60 V Enhancement, 6-Pin SOT-23 NDC7001C

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩6,034.80

재고있음

추가로 2025년 12월 29일 부터 30 개 단위 배송
추가로 2026년 1월 05일 부터 1,430 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 740	₩603.48	₩6,034.80
750 - 1490	₩588.44	₩5,884.40
1500 +	₩579.04	₩5,790.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 761-4574
제조사 부품 번호:: NDC7001C
제조업체:: onsemi

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type P, Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	510mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	10Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	1.1nC
	Minimum Operating Temperature	150°C
	Maximum Power Dissipation Pd	960mW
	Forward Voltage Vf	0.8V
	Transistor Configuration	Isolated
	Maximum Operating Temperature	-55°C
	Width	1.7 mm
	Standards/Approvals	No
	Length	3mm
	Height	1mm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type Type P, Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 510mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 10Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 1.1nC
	Minimum Operating Temperature 150°C
	Maximum Power Dissipation Pd 960mW
	Forward Voltage Vf 0.8V
	Transistor Configuration Isolated
	Maximum Operating Temperature -55°C
	Width 1.7 mm
	Standards/Approvals No
	Length 3mm
	Height 1mm
	Number of Elements per Chip 2
	Automotive Standard No

The NDC7001C is a dual N & P-Channel MOSFET that feature ON Semi’s DMOS technology. DMOS ensures fast switching, reliability and on-state resistance. These MOSFETs are a SOT-23 package type featuring 6 pins.

Features and benefits:

• DMOS Technology

• High saturation current

• High density cell design

• Copper lead frame for superior thermal and electrical capabilities

NDC7001C MOSFETs are ideal for;

• Low voltage

• Low current

• Switching

• Power supplies

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated 2 Type P, Type N-Channel Power MOSFET, 510 mA, 60 V Enhancement, 6-Pin SOT-23 NDC7001C

Features and benefits:

NDC7001C MOSFETs are ideal for;

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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