onsemi MTP3055VL Type N-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-220
- RS 제품 번호:
- 761-4542
- 제조사 부품 번호:
- MTP3055VL
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩12,878.00
재고있음
- 35 개 단위 배송 준비 완료
- 추가로 2026년 1월 02일 부터 205 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 10 | ₩2,575.60 | ₩12,878.00 |
| 15 - 20 | ₩2,530.48 | ₩12,652.40 |
| 25 + | ₩2,485.36 | ₩12,426.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 761-4542
- 제조사 부품 번호:
- MTP3055VL
- 제조업체:
- onsemi
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | MTP3055VL | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 48W | |
| Minimum Operating Temperature | -65°C | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Typical Gate Charge Qg @ Vgs | 7.8nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Height | 16.51mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series MTP3055VL | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 48W | ||
Minimum Operating Temperature -65°C | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Typical Gate Charge Qg @ Vgs 7.8nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Height 16.51mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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