onsemi NDT Type N-Channel MOSFET, 4 A, 60 V Enhancement, 4-Pin SOT-223 NDT3055L
- RS 제품 번호:
- 671-1090
- 제조사 부품 번호:
- NDT3055L
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩8,516.40
재고있음
- 160 개 단위 배송 준비 완료
- 추가로 2026년 1월 02일 부터 26,125 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 995 | ₩1,703.28 | ₩8,516.40 |
| 1000 - 1995 | ₩1,661.92 | ₩8,309.60 |
| 2000 + | ₩1,635.60 | ₩8,178.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 671-1090
- 제조사 부품 번호:
- NDT3055L
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | NDT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 3W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.56 mm | |
| Standards/Approvals | No | |
| Height | 1.6mm | |
| Length | 6.5mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-43-740 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series NDT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 3W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 3.56 mm | ||
Standards/Approvals No | ||
Height 1.6mm | ||
Length 6.5mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-43-740 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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