onsemi Isolated 2 N-Channel Power MOSFET, 115 mA, 60 V Enhancement, 6-Pin SC-70

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Subtotal 750 units (supplied on a reel)*

₩355,500.00

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포장 옵션
RS 제품 번호:
761-3571P
제조사 부품 번호:
2N7002DW
제조업체:
onsemi
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모두 선택

브랜드

onsemi

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

115mA

Maximum Drain Source Voltage Vds

60V

Package Type

SC-70

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

13.5Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

200mW

Maximum Gate Source Voltage Vgs

-20V, +20V

Transistor Configuration

Isolated

Maximum Operating Temperature

+150°C

Height

1mm

Length

2mm

Standards/Approvals

No

Width

1.25mm

Number of Elements per Chip

2

Automotive Standard

No

The 2N7002DW is a Dual N-channel general purpose MOSFET. It features low-on resistance and low gate threshold voltage. It also features fast switching speed and is available in an ultra-small surface mount package. This Dual N-channel MOSFET is typically used in all general purpose applications, but it is commonly used in motor controls and PMF’s (Power Management Functions).

Features and benefits:


• Dual N-Channel

• Low on resistance

• Low gate threshold

• Fast switching speed

• Low input & output leak

Enhancement Mode Dual MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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