onsemi UltraFET Type N-Channel MOSFET, 20 A, 200 V Enhancement, 8-Pin WDFN FDMS2672
- RS 제품 번호:
- 759-9594
- 제조사 부품 번호:
- FDMS2672
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩4,455.60
마지막 RS 재고
- 최종적인 2,503 개 unit(s)이 배송 준비 됨
수량 | 한팩당 |
|---|---|
| 1 - 749 | ₩4,455.60 |
| 750 - 1499 | ₩4,342.80 |
| 1500 + | ₩4,267.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 759-9594
- 제조사 부품 번호:
- FDMS2672
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | WDFN | |
| Series | UltraFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 156mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 78W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Length | 5mm | |
| Width | 6 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type WDFN | ||
Series UltraFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 156mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 78W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Length 5mm | ||
Width 6 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
관련된 링크들
- onsemi UltraFET Type N-Channel MOSFET, 20 A, 200 V Enhancement, 8-Pin WDFN
- onsemi UltraFET Type N-Channel MOSFET, 14 A, 250 V Enhancement, 8-Pin WDFN FDMS2734
- onsemi UltraFET Type N-Channel MOSFET, 48 A, 80 V Enhancement, 8-Pin WDFN FDMS3572
- onsemi UltraFET Type N-Channel MOSFET, 48 A, 80 V Enhancement, 8-Pin WDFN
- onsemi UltraFET Type N-Channel MOSFET, 14 A, 250 V Enhancement, 8-Pin WDFN
- onsemi UltraFET Type N-Channel MOSFET, 24 A, 150 V Enhancement, 8-Pin PQFN-8 FDMS2572
- onsemi UltraFET Type N-Channel MOSFET, 10.6 A, 60 V Enhancement, 8-Pin MLP FDMS5672
- onsemi PowerTrench Type N-Channel MOSFET, 122 A, 80 V Enhancement, 8-Pin WDFN FDMS86300