onsemi UltraFET Type N-Channel MOSFET, 48 A, 80 V Enhancement, 8-Pin WDFN
- RS 제품 번호:
- 166-3289
- 제조사 부품 번호:
- FDMS3572
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩6,164,520.00
일시적 품절
- 2026년 7월 27일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩2,054.84 | ₩6,166,776.00 |
| 6000 - 9000 | ₩2,015.36 | ₩6,043,260.00 |
| 12000 + | ₩1,974.00 | ₩5,922,564.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 166-3289
- 제조사 부품 번호:
- FDMS3572
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | UltraFET | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 78W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 6 mm | |
| Height | 0.75mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series UltraFET | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 78W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 6 mm | ||
Height 0.75mm | ||
Automotive Standard No | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
관련된 링크들
- onsemi UltraFET Type N-Channel MOSFET, 48 A, 80 V Enhancement, 8-Pin WDFN FDMS3572
- onsemi UltraFET Type N-Channel MOSFET, 20 A, 200 V Enhancement, 8-Pin WDFN
- onsemi UltraFET Type N-Channel MOSFET, 14 A, 250 V Enhancement, 8-Pin WDFN
- onsemi UltraFET Type N-Channel MOSFET, 20 A, 200 V Enhancement, 8-Pin WDFN FDMS2672
- onsemi UltraFET Type N-Channel MOSFET, 14 A, 250 V Enhancement, 8-Pin WDFN FDMS2734
- onsemi PowerTrench Type N-Channel MOSFET, 80 A, 100 V Enhancement, 8-Pin WDFN
- onsemi PowerTrench Type N-Channel MOSFET, 83 A, 80 V Enhancement, 8-Pin WDFN
- onsemi PowerTrench Type N-Channel MOSFET, 130 A, 80 V Enhancement, 8-Pin WDFN