Infineon HEXFET Type N-Channel MOSFET, 5.3 A, 30 V Enhancement, 3-Pin SOT-23 IRLML0030TRPBF

RS 제품 번호:: 725-9344
제조사 부품 번호:: IRLML0030TRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 5.3 A, 30 V Enhancement, 3-Pin SOT-23 IRLML0030TRPBF

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대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩5,038.40

재고있음

추가로 2025년 12월 29일 부터 800 개 단위 배송
추가로 2026년 1월 05일 부터 18,460 개 단위 배송

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수량	한팩당	한팩당*
20 - 740	₩251.92	₩5,038.40
760 - 1480	₩248.16	₩4,944.40
1500 +	₩240.64	₩4,831.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 725-9344
제조사 부품 번호:: IRLML0030TRPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.3A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	27mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	2.6nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.3W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.04mm
	Height	1.02mm
	Width	1.4 mm
	Distrelec Product Id	304-45-309
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.3A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 27mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 2.6nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.3W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.04mm
	Height 1.02mm
	Width 1.4 mm
	Distrelec Product Id 304-45-309
	Automotive Standard No

Infineon HEXFET Series MOSFET, 5.3A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML0030TRPBF

This MOSFET is designed to deliver efficient switching for electronic circuits across various industrial applications. Its enhancement mode FET configuration ensures optimal performance for load or system switching tasks. As a key component in the automation and electronics sectors, it offers versatility and high dependability, making it a fundamental selection for engineers.

Features & Benefits

• 5.3A continuous drain current extends operational capability

• 30V maximum drain-source voltage supports rigorous applications

• Low Rds(on) of 27 mΩ minimises energy losses during operation

• Compatible with surface mount technology for straightforward integration

• High-temperature rating of +150 °C maintains performance in challenging environments

• RoHS compliant, promoting eco-friendly design and manufacturing

Applications

• Utilised in microcontroller interfacing for load management

• Suitable for automotive electronics for switch control

• Employed in power supply circuits for efficient current handling

• Ideal for consumer electronics requiring compact power solutions

• Applied in automation systems for consistent control operations

How does the gate threshold voltage affect switching behaviour?

The gate threshold voltage specifies the minimum gate-to-source voltage required to activate the device, influencing its switching speed and operational efficiency.

What considerations should be taken during installation regarding thermal management?

Proper heat dissipation must be ensured as the maximum operating temperature is +150 °C, crucial for sustaining performance and safety.

Can it be integrated with existing circuits designed for other technologies?

Yes, it features an industry-standard pinout, ensuring compatibility with various existing surface mount techniques.

What are the implications of the maximum gate-source voltage rating?

The voltage rating of ±20 V must be observed to avoid gate damage and ensure stable operation within specified limits.

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.