onsemi NDT Type P-Channel MOSFET, 2.5 A, 60 V Enhancement, 4-Pin SOT-223 NDT2955
- RS 제품 번호:
- 671-1096
- 제조사 부품 번호:
- NDT2955
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩5,546.00
공급 부족
- 15 개 단위 배송 준비 완료
- 추가로 2026년 1월 26일 부터 79,525 개 단위 배송
당사의 현재 재고는 제한중이며, 제조사측에서는 공급 부족을 예상하고 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 995 | ₩1,109.20 | ₩5,546.00 |
| 1000 - 1995 | ₩1,079.12 | ₩5,395.60 |
| 2000 + | ₩1,064.08 | ₩5,320.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 671-1096
- 제조사 부품 번호:
- NDT2955
- 제조업체:
- onsemi
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NDT | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.56 mm | |
| Height | 1.6mm | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NDT | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Operating Temperature 150°C | ||
Width 3.56 mm | ||
Height 1.6mm | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
관련된 링크들
- onsemi NDT Type P-Channel MOSFET, 2.5 A, 60 V Enhancement, 4-Pin SOT-223
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- onsemi NDT Type P-Channel MOSFET, 5 A, 30 V Enhancement, 4-Pin SOT-223 NDT452AP
- onsemi NDT Type P-Channel MOSFET, 5 A, 30 V Enhancement, 4-Pin SOT-223
- onsemi NDT Type N-Channel MOSFET, 4 A, 60 V Enhancement, 4-Pin SOT-223
- onsemi NDT Type P-Channel MOSFET, 7.5 A, 30 V Enhancement, 4-Pin SOT-223 NDT456P
- onsemi NDT Type N-Channel MOSFET, 2.8 A, 60 V Enhancement, 4-Pin SOT-223 NDT014L
- onsemi NDT Type P-Channel MOSFET, 7.5 A, 30 V Enhancement, 4-Pin SOT-223
