onsemi PowerTrench Type P-Channel MOSFET, 1.6 A, 20 V Enhancement, 3-Pin SOT-23 FDN338P
- RS 제품 번호:
- 671-0438
- 제조사 부품 번호:
- FDN338P
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩5,658.80
공급 부족
- 80 개 단위 배송 준비 완료
- 추가로 2026년 1월 02일 부터 23,440 개 단위 배송
당사의 현재 재고는 제한중이며, 제조사측에서는 공급 부족을 예상하고 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 740 | ₩565.88 | ₩5,658.80 |
| 750 - 1490 | ₩558.36 | ₩5,583.60 |
| 1500 + | ₩545.20 | ₩5,452.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 671-0438
- 제조사 부품 번호:
- FDN338P
- 제조업체:
- onsemi
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 115mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 4.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Height | 0.94mm | |
| Length | 2.92mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 115mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 4.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Height 0.94mm | ||
Length 2.92mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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