onsemi PowerTrench Type P-Channel MOSFET, 800 mA, 150 V Enhancement, 3-Pin SOT-23
- RS 제품 번호:
- 166-3331
- 제조사 부품 번호:
- FDN86265P
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩2,092,440.00
일시적 품절
- 2026년 4월 24일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩697.48 | ₩2,091,312.00 |
| 6000 - 9000 | ₩682.44 | ₩2,049,012.00 |
| 12000 + | ₩669.28 | ₩2,008,404.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 166-3331
- 제조사 부품 번호:
- FDN86265P
- 제조업체:
- onsemi
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 800mA | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | PowerTrench | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.5W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.3V | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.94mm | |
| Length | 2.92mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 800mA | ||
Maximum Drain Source Voltage Vds 150V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.2Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.5W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.3V | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.94mm | ||
Length 2.92mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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