onsemi FDN337N N-Channel MOSFET, 2.2 A, 30 V Enhancement, 3-Pin SOT-23 FDN337N

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Subtotal 750 units (supplied on a reel)*

₩574,500.00

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포장 옵션
RS 제품 번호:
671-0429P
제조사 부품 번호:
FDN337N
제조업체:
onsemi
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

onsemi

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

FDN337N

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

-8V, +8V

Maximum Power Dissipation Pd

500mW

Typical Gate Charge Qg @ Vgs

7nC

Maximum Operating Temperature

150°C

Width

1.4mm

Standards/Approvals

No

Length

2.92mm

Height

940μm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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