onsemi Common Drain PowerTrench 2 Type N, Type P-Channel MOSFET, 9 A, 40 V Enhancement, 5-Pin TO-252 FDD8424H

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RS 제품 번호:
671-0356P
제조사 부품 번호:
FDD8424H
제조업체:
onsemi
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브랜드

onsemi

Transistor Configuration

Common Drain

Series

PowerTrench

Number of Elements per Chip

2

Channel Type

Type N, Type P

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

9 A

Maximum Drain Source Voltage (Vds)

40 V

Channel Mode

Enhancement

Pin Count

5

Package Type

TO-252

Height

2.39 mm

Length

6.73 mm

Maximum Drain Source Resistance (Rds)

54 mΩ

Maximum Gate Source Voltage (Vgs)

20 V, -20 V

Maximum Operating Temperature

150 °C

Maximum Power Dissipation (Pd)

3.1 W

Minimum Operating Temperature

-55 °C

Mount Type

Surface

Width

6.22 mm

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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