제조사부품번호

Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin I2PAK

RS 제품 번호:: 650-3707
제조사 부품 번호:: IRF5210LPBF
제조업체:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin I2PAK

대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩19,608.40

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	한팩당*
5 - 10	₩3,921.68	₩19,608.40
15 - 20	₩3,823.92	₩19,119.60
25 +	₩3,763.76	₩18,818.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 650-3707
제조사 부품 번호:: IRF5210LPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	38A
	Maximum Drain Source Voltage Vds	100V
	Package Type	I2PAK (TO-262)
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	150nC
	Forward Voltage Vf	1.6V
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	170W
	Maximum Operating Temperature	150°C
	Width	4.69 mm
	Height	10.54mm
	Length	10.54mm
	Standards/Approvals	Lead-Free
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 38A
	Maximum Drain Source Voltage Vds 100V
	Package Type I2PAK (TO-262)
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 150nC
	Forward Voltage Vf 1.6V
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 170W
	Maximum Operating Temperature 150°C
	Width 4.69 mm
	Height 10.54mm
	Length 10.54mm
	Standards/Approvals Lead-Free
	Automotive Standard No

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