제조사부품번호

Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263

RS 제품 번호:: 165-5892
제조사 부품 번호:: IRF5210STRLPBF
제조업체:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

₩2,158,240.00

재고있음

3,200 개 단위 배송 준비 완료

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수량	한팩당	릴당*
800 - 3200	₩2,697.80	₩2,157,638.40
4000 +	₩2,643.28	₩2,114,473.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 165-5892
제조사 부품 번호:: IRF5210STRLPBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	38A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	150nC
	Forward Voltage Vf	-1.6V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	170W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	9.65 mm
	Height	4.83mm
	Length	10.67mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 38A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 150nC
	Forward Voltage Vf -1.6V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 170W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 9.65 mm
	Height 4.83mm
	Length 10.67mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: CN

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Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263

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