Vishay IRFPG50 N-Channel Power MOSFET, 6.1 A, 1 kV Enhancement, 3-Pin TO-247AC IRFPG50PBF

RS 제품 번호:: 541-1095
Distrelec 제품 번호:: 301-91-596
제조사 부품 번호:: IRFPG50PBF
제조업체:: Vishay

Vishay IRFPG50 N-Channel Power MOSFET, 6.1 A, 1 kV Enhancement, 3-Pin TO-247AC IRFPG50PBF

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Subtotal (1 unit)*

₩11,140.00

추가로 2026년 10월 05일 부터 120 개 단위 배송
추가로 2026년 10월 12일 부터 501 개 단위 배송

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수량	한팩당
1 - 6	₩11,140.00
7 - 12	₩10,960.00
13 +	₩10,780.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 541-1095
Distrelec 제품 번호:: 301-91-596
제조사 부품 번호:: IRFPG50PBF
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	6.1A
	Maximum Drain Source Voltage Vds	1kV
	Series	IRFPG50
	Package Type	TO-247AC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	190W
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Forward Voltage Vf	1.8V
	Typical Gate Charge Qg @ Vgs	190nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	5.31mm
	Standards/Approvals	RoHS
	Length	15.87mm
	Height	20.7mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 6.1A
	Maximum Drain Source Voltage Vds 1kV
	Series IRFPG50
	Package Type TO-247AC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 190W
	Maximum Gate Source Voltage Vgs -20V, +20V
	Forward Voltage Vf 1.8V
	Typical Gate Charge Qg @ Vgs 190nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 5.31mm
	Standards/Approvals RoHS
	Length 15.87mm
	Height 20.7mm
	Automotive Standard No

Vishay IRFPG50 Series Power MOSFET, 1000V Drain Source Voltage, 190W Power Dissipation - IRFPG50PBF

This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power control in demanding industrial environments. It delivers high drain-to-source voltage capability and is intended for through-hole mounting in power assemblies where robust thermal and electrical performance across a wide ambient range is required.

Features and Benefits:

• 1000V rating enables high-voltage switching applications
• 6.1A continuous drain current supports moderate load currents
• 190W maximum dissipation allows sustained power handling
• 2Ω maximum Rds(on) simplifies gate drive and thermal design
• 190nC typical gate charge informs gate-drive energy budgeting
• 20V gate tolerance permits flexible gate drive margins

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor drive front-ends
• Used for inverter and UPS switching stages
• Can be used for resistive load switching in test equipment
• Suitable for through-hole prototyping and repair scenarios

What package and mounting method does it use?

It is supplied in a TO-247AC package designed for through-hole mounting to allow reliable board and heatsink attachment.

What thermal range is it rated to operate within?

It is specified to operate from -55°C up to 150°C, permitting use in environments with wide temperature variation.

How many pins are present and how does that affect layout?

The device has three pins, allowing standard single-channel MOSFET PCB layouts and conventional gate, drain and source routing.

What is the device’s forward voltage and how does that impact switching losses?

The forward voltage is 1.8V which contributes to conduction and switching energy calculations when used in circuits with diode conduction or body-diode events.