Vishay IRFPG30 N-Channel Power MOSFET, 3.1 A, 1 kV, 3-Pin TO-247AC IRFPG30PBF

RS 제품 번호:: 256-7300
제조사 부품 번호:: IRFPG30PBF
제조업체:: Vishay

Vishay IRFPG30 N-Channel Power MOSFET, 3.1 A, 1 kV, 3-Pin TO-247AC IRFPG30PBF

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Subtotal (1 tube of 25 units)*

₩107,800.00

추가로 2026년 10월 05일 부터 400 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
25 - 75	₩4,312.00	₩107,780.00
100 - 475	₩3,732.00	₩93,320.00
500 - 975	₩3,038.00	₩75,960.00
1000 +	₩2,826.00	₩70,640.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 256-7300
제조사 부품 번호:: IRFPG30PBF
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	3.1A
	Maximum Drain Source Voltage Vds	1kV
	Package Type	TO-247AC
	Series	IRFPG30
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5Ω
	Forward Voltage Vf	1.8V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Height	5.21mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 3.1A
	Maximum Drain Source Voltage Vds 1kV
	Package Type TO-247AC
	Series IRFPG30
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5Ω
	Forward Voltage Vf 1.8V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Height 5.21mm
	Automotive Standard No

Vishay IRFPG30 Series Power MOSFET, 1000V Maximum Drain Source Voltage, 125W Maximum Power Dissipation - IRFPG30PBF

This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion duties in demanding environments. It operates across a broad temperature range and is supplied in a through-hole package for robust mounting and thermal handling, making it suitable for industrial and high-voltage applications where controlled switching and heat dissipation are required.

Features and Benefits:

• 1000V drain-source rating enables high-voltage switching capability
• 3.1A continuous current supports moderate load conduction
• 125W dissipation allows sustained power handling under load
• 5Ω maximum RDS(on) limits conduction losses at rated conditions
• 80nC typical gate charge offers predictable switching energy
• 20V gate tolerance protects against excessive gate drive

Applications

• Suitable for high-voltage power supplies and converters
• Used in industrial motor drive control stages
• Ideal for switching in induction heating systems
• Can be used for line-side surge or clamp circuits
• Used for educational and prototype through-hole power designs

What mounting method does it require for installation?

It is supplied in a TO-247AC through-hole package intended for bolted or soldered mounting to a PCB and heatsink interfaces for effective thermal coupling.

How does it behave across temperature extremes?

The device is rated to operate from -55°C up to +150°C, allowing use in environments with wide ambient and junction temperature variations.

What gate drive constraints should designers observe?

The gate must be driven within ±20V maximum to avoid exceeding gate-source voltage limits and to maintain reliable switching.

Are there any materials or environmental restrictions noted?

It complies with RoHS requirements, restricting certain hazardous substances in its construction.