onsemi Type N-Channel MOSFET, 14 A, 50 V Enhancement, 3-Pin IPAK (TO-251) RFD14N05L
- RS 제품 번호:
- 325-7580
- 제조사 부품 번호:
- RFD14N05L
- 제조업체:
- onsemi
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- RS 제품 번호:
- 325-7580
- 제조사 부품 번호:
- RFD14N05L
- 제조업체:
- onsemi
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | IPAK (TO-251) | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±10 V | |
| Maximum Power Dissipation Pd | 48W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.8mm | |
| Standards/Approvals | No | |
| Width | 2.5 mm | |
| Height | 6.3mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type IPAK (TO-251) | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±10 V | ||
Maximum Power Dissipation Pd 48W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.8mm | ||
Standards/Approvals No | ||
Width 2.5 mm | ||
Height 6.3mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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