onsemi Type N-Channel MOSFET, 14 A, 50 V Enhancement, 3-Pin IPAK (TO-251) RFD14N05L

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
포장 옵션
RS 제품 번호:
325-7580
제조사 부품 번호:
RFD14N05L
제조업체:
onsemi
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

14A

Maximum Drain Source Voltage Vds

50V

Package Type

IPAK (TO-251)

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±10 V

Maximum Power Dissipation Pd

48W

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

40nC

Maximum Operating Temperature

175°C

Length

6.8mm

Standards/Approvals

No

Width

2.5 mm

Height

6.3mm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

관련된 링크들