onsemi Single SuperFET II 1 N-Channel MOSFET, 4.5 A, 600 V Enhancement, 3-Pin IPAK (TO-251) FCU900N60Z
- RS 제품 번호:
- 774-1124
- 제조사 부품 번호:
- FCU900N60Z
- 제조업체:
- onsemi
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이 품목의 재입고 여부는 알 수 없으며 제조업체에서 단종되고 있습니다.
- RS 제품 번호:
- 774-1124
- 제조사 부품 번호:
- FCU900N60Z
- 제조업체:
- onsemi
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | IPAK (TO-251) | |
| Series | SuperFET II | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 52W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.5mm | |
| Length | 6.8mm | |
| Height | 6.3mm | |
| Number of Elements per Chip | 1 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type IPAK (TO-251) | ||
Series SuperFET II | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 52W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Width 2.5mm | ||
Length 6.8mm | ||
Height 6.3mm | ||
Number of Elements per Chip 1 | ||
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
관련된 링크들
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