STMicroelectronics STW65N Type N-Channel MOSFET, 54 A, 650 V Enhancement, 3-Pin TO-247-4 STW65N045M9-4
- RS 제품 번호:
- 287-7055P
- 제조사 부품 번호:
- STW65N045M9-4
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal 10 units (supplied in a tube)*
₩157,800.00
재고있음
- 추가로 2026년 8월 03일 부터 300 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 10 + | ₩15,780.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 287-7055P
- 제조사 부품 번호:
- STW65N045M9-4
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STW65N | |
| Package Type | TO-247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 312W | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STW65N | ||
Package Type TO-247-4 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 312W | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is based on the most innovative super junction MDmesh M9 technology. The silicon based M9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Higher dv/dt capability
Excellent switching performance
Easy to drive
100 percent avalanche tested
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