Vishay IRFZ48R N-Channel Power MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220AB IRFZ48RPBF

RS 제품 번호:: 281-6036
Distrelec 제품 번호:: 304-42-108
제조사 부품 번호:: IRFZ48RPBF
제조업체:: Vishay

Vishay IRFZ48R N-Channel Power MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220AB IRFZ48RPBF

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Subtotal (5 units, in packs of 5)*

₩31,480.00

추가로 2026년 10월 05일 부터 1,000 개 단위 배송

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수량	한팩당	한팩당*
5 - 45	₩6,296.00	₩31,480.00
50 - 95	₩5,508.00	₩27,540.00
100 - 245	₩4,920.00	₩24,600.00
250 - 495	₩4,652.00	₩23,260.00
500 +	₩4,324.00	₩21,620.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 281-6036
Distrelec 제품 번호:: 304-42-108
제조사 부품 번호:: IRFZ48RPBF
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	60V
	Series	IRFZ48R
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.018Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	110nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	2V
	Maximum Power Dissipation Pd	190W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 60V
	Series IRFZ48R
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.018Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 110nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 2V
	Maximum Power Dissipation Pd 190W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFZ48RPBF

COO (Country of Origin):: CN

Vishay IRFZ48R Series Power MOSFET, 60V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IRFZ48RPBF

This power MOSFET is a through-hole N-channel transistor intended for switching and power-management roles in industrial and commercial electronics. Designed to operate across a wide temperature range, it suits demanding environments where high current handling and robust thermal performance are required. The device incorporates enhancement-mode channel control for efficient conduction in power circuits.

Features and Benefits:

• Low on-resistance 0.018Ω reduces conduction losses
• High continuous drain current 50A supports heavy loads
• Maximum power dissipation 190W enables high-power operation
• Maximum drain-source voltage 60V allows medium-voltage systems
• Typical gate charge 110nC facilitates predictable switching behaviour
• Gate-source rating 20V offers standard gate-drive compatibility

Applications

• Used for motor-drive stages in industrial controllers
• Suitable for DC-DC converters and power supplies
• Ideal for switch-mode power amplification circuits
• Can be used for battery management and protection systems
• Used with heat-sink assemblies in high-power modules

What mounting method does it require for assembly?

It is supplied in a TO-220AB package configured for through-hole mounting and common heatsink attachment.

How does it perform in extreme ambient temperatures?

The device is specified to operate from -55°C up to 175°C, allowing use in harsh thermal conditions without derating of basic functionality.

What gate-drive considerations are recommended?

The maximum gate-source voltage is 20V

designers should limit drive amplitude accordingly and account for the 110nC typical gate charge when sizing gate drivers.

How should thermal management be approached in high-power designs?

With a 190W maximum power dissipation rating, implement adequate heatsinking and thermal interface materials and consider PCB thermal vias to maintain junction temperatures within limits.