제조사부품번호

Vishay SIRS Type P-Channel MOSFET, 227 A, 30 V Enhancement, 8-Pin SO-8 SIRS4301DP-T1-GE3

RS 제품 번호:: 279-9959
제조사 부품 번호:: SIRS4301DP-T1-GE3
제조업체:: Vishay

Vishay SIRS Type P-Channel MOSFET, 227 A, 30 V Enhancement, 8-Pin SO-8 SIRS4301DP-T1-GE3

Subtotal (3000 units, on reels of 3000)*

₩10,884,000.00

마지막 RS 재고

최종적인 3,000 개 unit(s)이 배송 준비 됨

수량	한팩당	릴당*
3000 +	₩3,628.00	₩10,884,600.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 279-9959
제조사 부품 번호:: SIRS4301DP-T1-GE3
제조업체:: Vishay

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	227A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SO-8
	Series	SIRS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0015Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	548nC
	Maximum Power Dissipation Pd	132W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Length	5mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 227A
	Maximum Drain Source Voltage Vds 30V
	Package Type SO-8
	Series SIRS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0015Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 548nC
	Maximum Power Dissipation Pd 132W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Length 5mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIRS4301DP-T1-GE3

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Enhance power dissipation and lower RthJC

Fully lead (Pb)-free device

Vishay SIRS Type P-Channel MOSFET, 227 A, 30 V Enhancement, 8-Pin SO-8 SIRS4301DP-T1-GE3

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