Vishay SiHP068N60EF Type N-Channel MOSFET, 41 A, 600 V Enhancement, 3-Pin TO-220 SIHP068N60EF-GE3
- RS 제품 번호:
- 204-7256
- 제조사 부품 번호:
- SIHP068N60EF-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩32,373.60
마지막 RS 재고
- 최종적인 980 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 245 | ₩6,474.72 | ₩32,373.60 |
| 250 - 495 | ₩6,316.80 | ₩31,584.00 |
| 500 + | ₩6,219.04 | ₩31,095.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 204-7256
- 제조사 부품 번호:
- SIHP068N60EF-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 41A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SiHP068N60EF | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 68mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 250W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 27.69mm | |
| Height | 4.24mm | |
| Width | 9.96 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 41A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SiHP068N60EF | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 68mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 250W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 27.69mm | ||
Height 4.24mm | ||
Width 9.96 mm | ||
Automotive Standard No | ||
The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.
Avalanche energy rated (UIS)
Low figure-of-merit (FOM) Ron x Qg
관련된 링크들
- Vishay SiHB068N60EF Type N-Channel MOSFET, 41 A, 600 V Enhancement, 3-Pin TO-263 SIHB068N60EF-GE3
- Vishay SiHP22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-220 SIHP22N60EF-GE3
- Vishay SiHP052N60EF Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-220 SIHP052N60EF-GE3
- Vishay SiHB068N60EF Type N-Channel MOSFET, 41 A, 600 V Enhancement, 3-Pin TO-263
- Vishay SiHF068N60EF Type N-Channel MOSFET, 16 A, 600 V Enhancement, 3-Pin TO-220FP SIHF068N60EF-GE3
- Vishay SIHP Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3
- Vishay SIHP Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3
- Vishay SiHP22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-220