Infineon HEXFET Type N-Channel MOSFET, 173 A, 60 V Enhancement, 3-Pin TO-263
- RS 제품 번호:
- 273-3030
- 제조사 부품 번호:
- IRFS7537TRLPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩14,118.80
재고있음
- 785 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 20 | ₩2,823.76 | ₩14,118.80 |
| 25 - 45 | ₩2,357.52 | ₩11,787.60 |
| 50 - 95 | ₩2,173.28 | ₩10,866.40 |
| 100 - 245 | ₩2,019.12 | ₩10,095.60 |
| 250 + | ₩1,977.76 | ₩9,888.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-3030
- 제조사 부품 번호:
- IRFS7537TRLPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 173A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 230W | |
| Typical Gate Charge Qg @ Vgs | 142nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 173A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.30mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 230W | ||
Typical Gate Charge Qg @ Vgs 142nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
The Infineon single N-channel HEXFET power MOSFET in a D2-Pak package is optimized for broadest availability from distribution partners.
Product qualification according to JEDEC standard
Softer body diode compared to previous silicon generation
Industry standard surface-mount power package
관련된 링크들
- Infineon HEXFET Type N-Channel MOSFET, 173 A, 60 V Enhancement, 3-Pin TO-263 IRFS7537TRLPBF
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- Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263
