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Infineon HEXFET N-Channel MOSFET, 173 A, 60 V Enhancement, 3-Pin TO-263 IRFS7537TRLPBF

RS 제품 번호:: 273-3030
제조사 부품 번호:: IRFS7537TRLPBF
제조업체:: Infineon

Infineon HEXFET N-Channel MOSFET, 173 A, 60 V Enhancement, 3-Pin TO-263 IRFS7537TRLPBF

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Subtotal (1 pack of 5 units)*

₩21,700.00

추가로 2026년 10월 26일 부터 760 개 단위 배송

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수량	한팩당	한팩당*
5 - 20	₩4,340.00	₩21,700.00
25 - 45	₩3,628.00	₩18,140.00
50 - 95	₩3,340.00	₩16,700.00
100 - 245	₩3,104.00	₩15,520.00
250 +	₩3,044.00	₩15,220.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 273-3030
제조사 부품 번호:: IRFS7537TRLPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	173A
	Maximum Drain Source Voltage Vds	60V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.30mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	230W
	Typical Gate Charge Qg @ Vgs	142nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS Compliant

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 173A
	Maximum Drain Source Voltage Vds 60V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.30mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 230W
	Typical Gate Charge Qg @ Vgs 142nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS Compliant

Datasheet - IRFS7537TRLPBF

Infineon HEXFET Series MOSFET, 60V Maximum Drain-Source Voltage, 173A Maximum Continuous Drain Current - IRFS7537TRLPBF

This MOSFET is a high-current N-channel enhancement device designed for surface-mount power switching in demanding electronic systems. It operates across a broad temperature range suitable for harsh environments and delivers substantial power handling for applications requiring efficient conduction and controlled gate-drive behaviour.

Features and Benefits:

• 230W power dissipation enables sustained high-load operation
• 3.30mΩ Rds(on) minimises conduction losses for efficiency
• 142nC gate charge supports predictable switching performance
• 20V gate voltage tolerance protects against overdrive transients
• 1.2V forward voltage reduces voltage drop in conduction paths

Applications

• Suitable for DC motor drives in industrial control systems
• Ideal for high-current power supplies and converters
• Used with automotive electronics requiring wide temperature range
• Can be used for switch-mode power stages in inverters
• Useful in thermally managed power distribution modules

What are the thermal operating limits for reliable use?

The device supports operation from -55°C up to 175°C.

How does the package type affect mounting and heat management?

The TO-263 surface-mount package permits low-profile PCB mounting and efficient heat transfer to copper planes.

What channel characteristics determine switching polarity?

It is an N-channel enhancement-mode transistor, requiring a positive gate drive to conduct.

What Peak continuous current capability can be expected in heavy-duty circuits?

The component is specified for continuous drain currents up to 173A.