Infineon HEXFET Type N-Channel MOSFET, 250 A, 40 V Enhancement, 3-Pin TO-263

RS 제품 번호:: 165-5484
제조사 부품 번호:: IRFS7437TRLPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 250 A, 40 V Enhancement, 3-Pin TO-263

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 reel of 800 units)*

₩1,115,968.00

재고있음

2,400 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
800 - 3200	₩1,394.96	₩1,116,419.20
4000 +	₩1,368.64	₩1,094,160.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 165-5484
제조사 부품 번호:: IRFS7437TRLPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	250A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.8mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	230W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	150nC
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Standards/Approvals	No
	Height	4.83mm
	Width	9.65 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 250A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.8mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 230W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 150nC
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Standards/Approvals No
	Height 4.83mm
	Width 9.65 mm
	Automotive Standard No

해당 안됨

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 250A Maximum Continuous Drain Current, 230W Maximum Power Dissipation - IRFS7437TRLPBF

This MOSFET is intended for high-performance applications that require efficient power management. It is utilised across various sectors and offers robust features suitable for challenging environments. Its Ability to manage high current and voltage levels makes it well-suited for Advanced technology applications.

Features & Benefits

• Supports a maximum continuous drain current of 250A for high-power applications

• Offers a maximum drain-source voltage of 40V, ensuring reliability in different setups

• Exhibits low Rds(on) of 1.4mΩ, contributing to reduced power losses

• Designed for surface mounting, simplifying installation

• Capable of handling Rapid switching applications, which enhances efficiency

Applications

• Suitable for brushed motor drive

• Ideal for battery-powered circuits, enabling efficient power usage

• Employed in half-bridge and full-bridge topologies for precise control

• Utilised in synchronous rectifier to enhance energy savings

• Applicable in resonant mode power supplies for stable performance

How is the power dissipation managed during operation?

Power dissipation is managed through a maximum rating of 230W, ensuring thermal stability under high load conditions.

What is the significance of the low Rds(on) value?

The low Rds(on) Value minimises energy loss during operation, improving efficiency in high-current applications.

Can this be used in high-temperature environments?

With an operating temperature range of -55°C to +175°C, it is suitable for diverse applications, including high-temperature environments.

What installation considerations should I be aware of?

Ensure proper thermal management as per specifications to maintain operational efficiency and reliability during intense applications.

Is it compatible with various power supply designs?

Yes, the MOSFET is versatile and can be integrated into numerous power supply designs, providing adaptability across different projects.