제조사부품번호

Infineon CoolGaN Type N-Channel MOSFET, 10 A, 600 V Enhancement, 8-Pin LSON IGLD60R190D1AUMA3

RS 제품 번호:: 232-0419
제조사 부품 번호:: IGLD60R190D1AUMA3
제조업체:: Infineon

Infineon CoolGaN Type N-Channel MOSFET, 10 A, 600 V Enhancement, 8-Pin LSON IGLD60R190D1AUMA3

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대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩8,140.40

마지막 RS 재고

최종적인 2,040 개 unit(s)이 배송 준비 됨

수량	한팩당
1 - 9	₩8,140.40
10 - 99	₩7,971.20
100 - 249	₩7,839.60
250 - 499	₩7,670.40
500 +	₩7,520.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 232-0419
제조사 부품 번호:: IGLD60R190D1AUMA3
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	600V
	Series	CoolGaN
	Package Type	LSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 600V
	Series CoolGaN
	Package Type LSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IGLD60R190D1AUMA3

The Infineon 600V enhancement-mode power transistor offers fast turn-on and turn-off speed, minimum switching losses and enables simple half-bridge topologies with the highest efficiency. The gallium nitride CoolGaN 600V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards. Its improves system efficiency, improves power density and enables higher operating frequency.

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Infineon CoolGaN Type N-Channel MOSFET, 10 A, 600 V Enhancement, 8-Pin LSON IGLD60R190D1AUMA3

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