제조사부품번호

Microchip VP2110 Type P-Channel MOSFET, -120 mA, 100 V Enhancement, 3-Pin SOT-23 VP2110K1-G

RS 제품 번호:: 264-8951
제조사 부품 번호:: VP2110K1-G
제조업체:: Microchip

Microchip VP2110 Type P-Channel MOSFET, -120 mA, 100 V Enhancement, 3-Pin SOT-23 VP2110K1-G

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩12,144.80

일시적 품절

1,840 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 40	₩1,214.48	₩12,144.80
50 - 90	₩1,191.92	₩11,909.80
100 - 240	₩1,167.48	₩11,671.04
250 - 990	₩1,143.04	₩11,437.92
1000 +	₩1,120.48	₩11,208.56

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 264-8951
제조사 부품 번호:: VP2110K1-G
제조업체:: Microchip

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Microchip
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-120mA
	Maximum Drain Source Voltage Vds	100V
	Package Type	SOT-23
	Series	VP2110
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	12Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	0.36W
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	2.9mm
	Width	1.3 mm
	Height	1.12mm
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -120mA
	Maximum Drain Source Voltage Vds 100V
	Package Type SOT-23
	Series VP2110
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 12Ω
	Channel Mode Enhancement
	Forward Voltage Vf 2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 0.36W
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 2.9mm
	Width 1.3 mm
	Height 1.12mm
	Automotive Standard No

Datasheet - VP2110K1-G

The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-to-drain diode

High input impedance and high gain

Microchip VP2110 Type P-Channel MOSFET, -120 mA, 100 V Enhancement, 3-Pin SOT-23 VP2110K1-G

관련된 링크들