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Microchip VP2450 Type P-Channel MOSFET, 160 mA, 500 V Enhancement, 3-Pin SOT-89 VP2450N8-G

RS 제품 번호:: 177-9737
제조사 부품 번호:: VP2450N8-G
제조업체:: Microchip

Microchip VP2450 Type P-Channel MOSFET, 160 mA, 500 V Enhancement, 3-Pin SOT-89 VP2450N8-G

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Subtotal (1 pack of 5 units)*

₩15,124.60

재고있음

추가로 2025년 12월 29일 부터 1,920 개 단위 배송

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수량	한팩당	한팩당*
5 +	₩3,024.92	₩15,124.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 177-9737
제조사 부품 번호:: VP2450N8-G
제조업체:: Microchip

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Microchip
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	160mA
	Maximum Drain Source Voltage Vds	500V
	Series	VP2450
	Package Type	SOT-89
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	35Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.8V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.6W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Height	1.6mm
	Length	4.6mm
	Width	2.6 mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 160mA
	Maximum Drain Source Voltage Vds 500V
	Series VP2450
	Package Type SOT-89
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 35Ω
	Channel Mode Enhancement
	Forward Voltage Vf -1.8V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.6W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Height 1.6mm
	Length 4.6mm
	Width 2.6 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: TW

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

High input impedance and high gain

Excellent thermal stability

Integral source-to-drain diode

Microchip VP2450 Type P-Channel MOSFET, 160 mA, 500 V Enhancement, 3-Pin SOT-89 VP2450N8-G

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