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Microchip TN2106 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin TO-92

RS 제품 번호:: 177-9692
제조사 부품 번호:: TN2106N3-G
제조업체:: Microchip

Microchip TN2106 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin TO-92

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대량 구매 할인 기용 가능

Subtotal (1 Bag of 1000 units)*

₩695,600.00

재고있음

1,000 개 단위 배송 준비 완료

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수량	한팩당	Per Bag*
1000 - 4000	₩695.60	₩696,540.00
5000 +	₩627.92	₩626,980.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 177-9692
제조사 부품 번호:: TN2106N3-G
제조업체:: Microchip

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Microchip
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	300mA
	Maximum Drain Source Voltage Vds	60V
	Series	TN2106
	Package Type	TO-92
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	740mW
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.8V
	Maximum Operating Temperature	150°C
	Height	5.33mm
	Standards/Approvals	No
	Width	4.06 mm
	Length	5.08mm
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 300mA
	Maximum Drain Source Voltage Vds 60V
	Series TN2106
	Package Type TO-92
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 740mW
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.8V
	Maximum Operating Temperature 150°C
	Height 5.33mm
	Standards/Approvals No
	Width 4.06 mm
	Length 5.08mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: TW

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Microchip TN2106 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin TO-92

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