Infineon IPT Type N-Channel MOSFET, 190 A, 319 V, 16-Pin TO-263 IPTC039N15NM5ATMA1
- RS 제품 번호:
- 260-2670
- 제조사 부품 번호:
- IPTC039N15NM5ATMA1
- 제조업체:
- Infineon
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Subtotal (1 unit)*
₩9,945.20
재고있음
- 50 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩9,945.20 |
| 10 - 99 | ₩8,948.80 |
| 100 - 249 | ₩8,065.20 |
| 250 - 499 | ₩7,256.80 |
| 500 + | ₩7,106.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 260-2670
- 제조사 부품 번호:
- IPTC039N15NM5ATMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 190A | |
| Maximum Drain Source Voltage Vds | 319V | |
| Package Type | TO-263 | |
| Series | IPT | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 3.9mΩ | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.81V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 319W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Height | 2.35mm | |
| Length | 10.1mm | |
| Width | 10.3 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 190A | ||
Maximum Drain Source Voltage Vds 319V | ||
Package Type TO-263 | ||
Series IPT | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 3.9mΩ | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.81V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 319W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Height 2.35mm | ||
Length 10.1mm | ||
Width 10.3 mm | ||
Automotive Standard No | ||
The Infineon MOSFET provides a cooling package for superior thermal performance with an innovative package combined with the key features of the technology which allows best in class products as well as high current rating for high-power density designs.
Increased system efficiency enabling extended battery life time
High power density
Superior thermal performance
Saving in cooling system
관련된 링크들
- Infineon IPT Type N-Channel MOSFET, 190 A, 319 V, 16-Pin TO-263
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