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Infineon IPT Type N-Channel MOSFET, 143 A, 150 V, 16-Pin HDSOP

RS 제품 번호:: 259-2733
제조사 부품 번호:: IPTC054N15NM5ATMA1
제조업체:: Infineon

Infineon IPT Type N-Channel MOSFET, 143 A, 150 V, 16-Pin HDSOP

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대량 구매 할인 기용 가능

Subtotal (1 reel of 1800 units)*

₩7,624,152.00

재고있음

1,800 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
1800 - 1800	₩4,235.64	₩7,624,152.00
3600 - 3600	₩4,151.04	₩7,471,533.60
5400 +	₩4,068.32	₩7,322,299.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 259-2733
제조사 부품 번호:: IPTC054N15NM5ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	143A
	Maximum Drain Source Voltage Vds	150V
	Package Type	HDSOP
	Series	IPT
	Pin Count	16
	Maximum Drain Source Resistance Rds	5.4mΩ
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.83V
	Typical Gate Charge Qg @ Vgs	58nC
	Maximum Power Dissipation Pd	250W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC 61249-2-21, RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 143A
	Maximum Drain Source Voltage Vds 150V
	Package Type HDSOP
	Series IPT
	Pin Count 16
	Maximum Drain Source Resistance Rds 5.4mΩ
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.83V
	Typical Gate Charge Qg @ Vgs 58nC
	Maximum Power Dissipation Pd 250W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC 61249-2-21, RoHS
	Automotive Standard No

Datasheet - IPTC054N15NM5ATMA1

The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.

N-channel, normal level

Very low on-resistance RDS(on)

Superior thermal resistance

100% avalanche tested

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-25

Infineon IPT Type N-Channel MOSFET, 143 A, 150 V, 16-Pin HDSOP

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