Infineon iPB N-Channel MOSFET, 120 A, 40 V Enhancement TO-263 IPB120N04S402ATMA1

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RS 제품 번호:
259-1549
제조사 부품 번호:
IPB120N04S402ATMA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Maximum Drain Source Resistance Rds

1.80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

+175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Infineon iPB Series MOSFET, 40V Drain-Source Voltage, 120A Continuous Drain Current - IPB120N04S402ATMA1


This MOSFET is a high-current enhancement-mode N-channel device designed for surface-mounted power switching. It operates across a wide temperature range suitable for demanding environments and conforms to industry environmental directives and automotive stress standards.

Features and Benefits:


• 1.80mΩ low Rds(on) reduces conduction losses
• 40V voltage rating supports medium-voltage power stages
• 120A continuous drain current enables high-current delivery
• TO-263 surface package simplifies thermal management
• -55°C to +175°C range sustains extreme temperature operation

Applications


• Suitable for automotive power conversion modules
• Ideal for industrial motor drive stages
• Used with high-current DC distribution systems
• Can be used for power switching in harsh environments

What mounting style does it require?


It is intended for surface mounting in the TO-263 package format.

Which temperature extremes can it withstand during operation?


It is rated to function from -55°C up to +175°C.

Does it meet automotive qualification standards?


It complies with the AEC‑Q101 automotive qualification.

What channel configuration and mode does it use?


It is an enhancement-mode N-channel transistor.

Are there environmental restrictions for its materials?


It is RoHS-compliant.

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