Infineon BSC N-Channel MOSFET, 58 A, 25 V N, 8-Pin TDSON BSC050NE2LSATMA1
- RS 제품 번호:
- 259-1472
- 제조사 부품 번호:
- BSC050NE2LSATMA1
- 제조업체:
- Infineon
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Subtotal (1 reel of 5000 units)*
₩2,520,000.00
일시적 품절
- 2027년 10월 28일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 5000 + | ₩504.00 | ₩2,518,000.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 259-1472
- 제조사 부품 번호:
- BSC050NE2LSATMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | TDSON | |
| Series | BSC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 28W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type TDSON | ||
Series BSC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 28W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSC Series MOSFET, 25V Maximum Drain-Source Voltage, 28W Maximum Power Dissipation - BSC050NE2LSATMA1
This MOSFET is a surface-mounted N‑channel switching device designed for high‑current applications. It operates across an extensive temperature range and is supplied in an 8‑pin TDSON package for Compact board‑level integration. The device conforms to RoHS requirements and is intended for power‑management roles where low conduction losses and efficient thermal handling are important.
Features and Benefits:
• 5mΩ Rds(on) reduces conduction losses for high‑current switching
• 58A continuous drain current supports heavy‑load operation
• 28W power dissipation enables elevated thermal throughput
• 1V forward voltage lowers voltage drop during conduction
• -55°C to +150°C rating extends operational temperature capability
• 58A continuous drain current supports heavy‑load operation
• 28W power dissipation enables elevated thermal throughput
• 1V forward voltage lowers voltage drop during conduction
• -55°C to +150°C rating extends operational temperature capability
Applications
• Suitable as an SMD power MOSFET for motor control
• Used with DC power stages requiring high‑current 58A MOSFET with 5mΩ Rds(on)
• Ideal for Compact power converters using surface‑mount TDSON MOSFETs rated 25V
• Can be used for low Rds(on) power MOSFET 28W switching circuits
• Used with DC power stages requiring high‑current 58A MOSFET with 5mΩ Rds(on)
• Ideal for Compact power converters using surface‑mount TDSON MOSFETs rated 25V
• Can be used for low Rds(on) power MOSFET 28W switching circuits
What pin count and package does it use?
It is supplied in an 8‑pin TDSON package for surface mounting.
How does the device handle automotive specification needs?
It is not specified as an automotive‑grade component but meets RoHS environmental limits.
What channel configuration and polarity are implemented?
The device uses an N‑channel configuration for low‑side or high‑side switching arrangements.
What are the thermal limits for operation?
The device is rated to function from -55°C up to +150°C.
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