Infineon OptiMOS Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON

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RS 제품 번호:
170-2297
제조사 부품 번호:
BSC014N04LSATMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

40V

Package Type

TDSON

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

96W

Typical Gate Charge Qg @ Vgs

61nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Standards/Approvals

J-STD20 and JESD22

Height

1.1mm

Length

5.15mm

Automotive Standard

No

Infineon OptiMOS Series MOSFET, 40V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC014N04LSATMA1


This MOSFET is a high-current N-channel switching transistor designed for surface-mount power applications. It operates across a wide temperature span, supports substantial continuous drain currents and is intended for compact power conversion and high-efficiency switching tasks in industrial electronic systems.

Features and Benefits:


• 1.4mΩ low Rds(on) reduces conduction losses
• 100A continuous drain current enables high-current handling
• 40V drain-source rating permits mid-voltage power stages
• 61nC typical gate charge supports fast switching performance
• 96W maximum power dissipation allows significant thermal loading
• 20V maximum gate-source voltage accommodates robust gate drive

Applications


• Suitable for DC-DC converter primary and secondary stages
• Ideal for high-current power rails in industrial equipment
• Used with synchronous buck converters for efficient switching
• Can be used for motor driver half-bridge modules
• Suitable for compact surface-mount power assemblies

What package and mounting method does it use?


It is supplied in an 8-pin TDSON package and intended for surface mounting to a board.

How does it cope with extended temperature ranges?


It is rated to operate from -55°C up to 150°C, enabling use in demanding thermal environments.

What gate-drive limitations should designers observe?


The device permits a maximum gate-source voltage of 20V, so gate drivers must remain within this limit.

What electrical polarity and channel behaviour does it follow?


It is an enhancement-mode N-channel device and requires positive gate drive to conduct.

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