Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Type N-Channel MOSFET, 20 A, 100 V Dual N, 8-Pin TDSON
- RS 제품 번호:
- 258-3882
- 제조사 부품 번호:
- IPG20N10S4L22AATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 5000 units)*
₩5,837,400.00
일시적 품절
- 2026년 4월 06일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 5000 - 5000 | ₩1,167.48 | ₩5,837,400.00 |
| 10000 - 10000 | ₩1,131.76 | ₩5,662,560.00 |
| 15000 + | ₩1,097.92 | ₩5,492,420.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-3882
- 제조사 부품 번호:
- IPG20N10S4L22AATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TDSON | |
| Series | OptiMOSTM-T2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Dual N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual N Channel Logic Level Enhancement Mode | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TDSON | ||
Series OptiMOSTM-T2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Dual N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual N Channel Logic Level Enhancement Mode | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-T2 power-transistor is Dual N-channel normal level enhancement mode. It has 175°C operating temperature.
AEC Q101 qualified
MSL1 up to 260°C peak reflow
관련된 링크들
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Type N-Channel MOSFET, 20 A, 100 V Dual N, 8-Pin TDSON
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin
- Infineon Dual N Channel Logic Level Enhancement Mode IPG20N06S4L-11 Type N-Channel MOSFET, 20 A, 60 V TDSON
- Infineon Dual IPG20 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin TDSON
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 2 Type N-Channel MOSFET, 20 A, 60 V N, 8-Pin SuperSO8
- Infineon Dual IPG20 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin TDSON IPG20N04S408AATMA1
- Infineon Dual OptiMOS Type N-Channel MOSFET, 20 A, 55 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS Type N-Channel MOSFET, 20 A, 55 V Enhancement, 8-Pin TDSON IPG20N06S2L35AATMA1