Infineon Dual N Channel Normal Level IPG 2 Type N-Channel MOSFET, 20 A, 40 V Enhancement, 8-Pin SuperSO
- RS 제품 번호:
- 229-1841
- 제조사 부품 번호:
- IPG20N04S409ATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩21,582.40
재고있음
- 15,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩2,158.24 | ₩21,582.40 |
| 20 - 90 | ₩2,103.72 | ₩21,037.20 |
| 100 - 240 | ₩2,051.08 | ₩20,510.80 |
| 250 - 490 | ₩2,000.32 | ₩20,003.20 |
| 500 + | ₩1,951.44 | ₩19,514.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 229-1841
- 제조사 부품 번호:
- IPG20N04S409ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPG | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 54W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual N Channel Normal Level | |
| Height | 1mm | |
| Width | 5.9 mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 5.15mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPG | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 54W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual N Channel Normal Level | ||
Height 1mm | ||
Width 5.9 mm | ||
Standards/Approvals RoHS Compliant | ||
Length 5.15mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon dual n channel normal level MOSFET has same thermal and electrical performance as a DPAK with the same die size. It's exposed pad provides excellent thermal transfer. It is two n channel in one package with 2 isolated lead frames.
It is RoHS compliant and AEC Q101 qualified
It has 175°C operating temperature
관련된 링크들
- Infineon Dual N Channel Normal Level IPG 2 Type N-Channel MOSFET, 20 A, 40 V Enhancement, 8-Pin SuperSO
- Infineon Dual N Channel Normal Level IPG20N06S4-15A 2 Type N-Channel MOSFET, 20 A, 60 V Dual N, 8-Pin SuperSO8 5 x 6
- Infineon Dual N Channel Normal Level Enhancement Mode IPG16N10S4-61 Type N-Channel MOSFET, 16 A, 100 V Dual N, 8-Pin
- Infineon Dual N IPG 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin SuperSO
- Infineon Dual N IPG 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin SuperSO IPG20N04S412AATMA1
- Infineon Dual IPG 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin SuperSO
- Infineon Dual IPG 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin SuperSO IPG20N04S4L11AATMA1
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 2 Type N-Channel MOSFET, 20 A, 60 V N, 8-Pin SuperSO8