Infineon Dual N Channel Logic Level Enhancement Mode IPG20N06S4L-11 Type N-Channel MOSFET, 20 A, 60 V TDSON
- RS 제품 번호:
- 258-3879
- 제조사 부품 번호:
- IPG20N06S4L11ATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩6,598.80
재고있음
- 4,976 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩3,299.40 | ₩6,598.80 |
| 10 - 98 | ₩2,961.00 | ₩5,922.00 |
| 100 - 248 | ₩2,867.00 | ₩5,734.00 |
| 250 - 498 | ₩2,406.40 | ₩4,812.80 |
| 500 + | ₩2,237.20 | ₩4,474.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-3879
- 제조사 부품 번호:
- IPG20N06S4L11ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | IPG20N06S4L-11 | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Maximum Power Dissipation Pd | 65W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual N Channel Logic Level Enhancement Mode | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series IPG20N06S4L-11 | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Maximum Power Dissipation Pd 65W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual N Channel Logic Level Enhancement Mode | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS T2 power-transistor is dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction. Exposed pad provides excellent thermal transfer, two N-Channel MOSFETs in one package with 2 isolated lead frames.
Dual N-channel Logic Level - Enhancement mode
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
관련된 링크들
- Infineon Dual N Channel Logic Level Enhancement Mode IPG20N06S4L-11 Type N-Channel MOSFET, 20 A, 60 V TDSON
- Infineon IPG Dual N-Channel MOSFET, 20 A, 40 V P TDSON
- Infineon IPG Dual N-Channel MOSFET, 20 A, 40 V P TDSON IPG20N04S4L08ATMA1
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35ATMA1
- Infineon Dual CoolMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L22ATMA1
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin
- Infineon Dual OptiMOS Type N-Channel MOSFET, 20 A, 55 V Enhancement, 8-Pin TDSON IPG20N06S2L35AATMA1
- Infineon Dual IPG20 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin TDSON IPG20N04S408AATMA1