Infineon iPB Type N-Channel MOSFET, 136 A, 150 V N, 7-Pin TO-263 IPB060N15N5ATMA1
- RS 제품 번호:
- 258-3794
- 제조사 부품 번호:
- IPB060N15N5ATMA1
- 제조업체:
- Infineon
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₩7,162.80
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수량 | 한팩당 |
|---|---|
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| 500 + | ₩4,380.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-3794
- 제조사 부품 번호:
- IPB060N15N5ATMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 136A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 54.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 136A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 54.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklifts and e-scooters, as well as telecom and solar applications. The new products offer a breakthrough reduction in RDS(on) and Qrr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge increases commutation ruggedness.
Lower output charge
Ultra-low reverse recovery charge
Reduced paralleling
Higher power density designs
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