Infineon BSZ Type N-Channel MOSFET, 158 A, 40 V N, 8-Pin TSDSON
- RS 제품 번호:
- 258-0709
- 제조사 부품 번호:
- BSZ018N04LS6ATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 5000 units)*
₩5,640,000.00
일시적 품절
- 2026년 6월 01일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 5000 - 5000 | ₩1,128.00 | ₩5,635,300.00 |
| 10000 - 10000 | ₩1,105.44 | ₩5,522,500.00 |
| 15000 + | ₩1,082.88 | ₩5,411,580.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-0709
- 제조사 부품 번호:
- BSZ018N04LS6ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 158A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSZ | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.78V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 158A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSZ | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.78V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 6 power MOSFET 40V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits. Improvements in on-state resistance enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.
Highest system efficiency
Less paralleling required
Increased power density
Very low voltage overshoot
관련된 링크들
- Infineon BSZ Type N-Channel MOSFET, 158 A, 40 V N, 8-Pin TSDSON BSZ018N04LS6ATMA1
- Infineon BSZ Type N-Channel MOSFET, 104 A, 60 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET, 223 A, 25 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET, 104 A, 60 V N, 8-Pin TSDSON BSZ037N06LS5ATMA1
- Infineon BSZ Type N-Channel MOSFET, 223 A, 25 V N, 8-Pin TSDSON BSZ009NE2LS5ATMA1
- Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin TSDSON-8 FL
- Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin TSDSON-8 FL BSZ010NE2LS5ATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 46 A, 60 V N, 8-Pin TSDSON BSZ099N06LS5ATMA1