제조사부품번호

Infineon BSZ Type N-Channel MOSFET, 104 A, 60 V N, 8-Pin TSDSON

RS 제품 번호:: 258-0711
제조사 부품 번호:: BSZ037N06LS5ATMA1
제조업체:: Infineon

Infineon BSZ Type N-Channel MOSFET, 104 A, 60 V N, 8-Pin TSDSON

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 reel of 5000 units)*

₩4,963,200.00

일시적 품절

2026년 6월 01일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
5000 - 5000	₩992.64	₩4,965,080.00
10000 - 10000	₩973.84	₩4,865,440.00
15000 +	₩953.16	₩4,768,620.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 258-0711
제조사 부품 번호:: BSZ037N06LS5ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	104A
	Maximum Drain Source Voltage Vds	60V
	Series	BSZ
	Package Type	TSDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.3mΩ
	Channel Mode	N
	Forward Voltage Vf	0.8V
	Typical Gate Charge Qg @ Vgs	35nC
	Maximum Power Dissipation Pd	69W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	IEC 61249-2-21, RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 104A
	Maximum Drain Source Voltage Vds 60V
	Series BSZ
	Package Type TSDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.3mΩ
	Channel Mode N
	Forward Voltage Vf 0.8V
	Typical Gate Charge Qg @ Vgs 35nC
	Maximum Power Dissipation Pd 69W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals IEC 61249-2-21, RoHS
	Automotive Standard No

Datasheet - BSZ037N06LS5ATMA1

The Infineon OptiMOS 5 60V power MOSFET comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies, for telecom bricks and server applications, as well as portable chargers. The small footprint of only 3.3x3.3mm2 combined with outstanding electrical performance further contributes towards best-in-class power density and form factor improvement in the end application.

Monolithically integrated Schottky-like diode

Ultra low charges

Ideal for high performance applications

RoHS compliant - halogen free

Less paralleling required

Very low voltage overshoot

Reduced need for snubber circuit

Infineon BSZ Type N-Channel MOSFET, 104 A, 60 V N, 8-Pin TSDSON

관련된 링크들