Infineon BSV Type P-Channel MOSFET, 1.50 A, -20 V Enhancement, 6-Pin SOT-363 BSV236SPH6327XTSA1

RS 제품 번호:: 250-0562
제조사 부품 번호:: BSV236SPH6327XTSA1
제조업체:: Infineon

Infineon BSV Type P-Channel MOSFET, 1.50 A, -20 V Enhancement, 6-Pin SOT-363 BSV236SPH6327XTSA1

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Subtotal (1 pack of 10 units)*

₩5,960.00

일시적 품절

2027년 9월 06일 부터 배송

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수량	한팩당	한팩당*
10 - 10	₩596.00	₩5,960.00
20 - 90	₩540.00	₩5,400.00
100 - 240	₩484.00	₩4,840.00
250 - 490	₩436.00	₩4,360.00
500 +	₩390.00	₩3,900.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 250-0562
제조사 부품 번호:: BSV236SPH6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.50A
	Maximum Drain Source Voltage Vds	-20V
	Series	BSV
	Package Type	SOT-363
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	4.20mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.50A
	Maximum Drain Source Voltage Vds -20V
	Series BSV
	Package Type SOT-363
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 4.20mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - BSV236SPH6327XTSA1

Infineon BSV Series MOSFET, 20V Maximum Drain-Source Voltage, 1.50A Maximum Continuous Drain Current - BSV236SPH6327XTSA1

This p-channel MOSFET is a surface-mount transistor designed for switching and analogue functions in Compact assemblies. It operates across a wide temperature span from -55°C to +150°C and is suited to applications requiring low conduction losses and modest continuous current handling. The device uses an enhancement-mode P-channel channel and is available in a small SOT-363 package for dense board layouts.

Features and Benefits:

• Low Rds(on) 4.20mΩ reduces conduction losses and improves efficiency
• 20V gate tolerance supports medium-voltage P-channel switching
• 1.50A continuous current capability enables steady low-current loads
• 81W power dissipation allows short-duration higher-power handling
• 80nC typical gate charge permits predictable switching energy control

Applications

• Suitable for high-temperature automotive power routing
• Ideal for surface-mount load switching on Compact PCBs
• Used with gate drivers in battery management systems
• Can be used for polarity protection and reverse-current control

What package type should be expected for Compact assemblies?

It is supplied in a SOT-363 package suitable for space-constrained surface-mount designs.

How does gate voltage limitation affect Interface choices?

Gate-to-source voltage must not exceed 20V, so driver circuits should keep Vgs within this range.

What approval supports its automotive use?

It complies with AEC‑Q101 standards for automotive-grade semiconductor qualification.

What thermal range can be handled in harsh environments?

Rated ambient operation spans from -55°C up to +150°C to accommodate extreme-temperature applications.